2n3055 31/10/2012 comset semiconductors 1 | 3 npn silicon darlingtons the 2n3055 is a silicon planar epitaxial npn transistor in jedec to-39 metal case. designed for general purpose, moderate speed, switching and amplifier applications compliance to rohs . absolute maximum ratings symbol ratings value unit v cbo collector to base voltage 100 v v ceo #collector-emitter voltage 60 v vcer collector-emitter voltage 70 v v ebo emitter-base voltage 7 v v cb collector-base voltage 100 v v eb emitter-base voltage 7 v i c collector current ? continuous 15 a i b base current ? continuous 7 a p d total device dissipation @ t c = 25 115 w derate above 25 0.657 w/c t j junction temperature 200 c t s storage temperature -65 to +200 c thermal characteristics symbol ratings value unit r thjc thermal resistance, junction to case 1.52 c/w
2n3055 31/10/2012 comset semiconductors 2 | 3 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit v ceo(sus) collector-emitter sustaining voltage (*) i c =200 ma, i b =0 60 - - v bv cer collector-emitter breakdown voltage (*) i c =200 ma, r be =100 ? 70 - - v i ceo collector-emitter current c ve =30 v, i b =0 - - 0.7 ma i cex collector cutoff current v ce =100 v, v eb(off) =1.5 v - - 5.0 ma i ebo emitter cutoff current v be =7.0 v, i c =0 - - 5.0 ma h fe dc current gain i c =4.0 a, i b =4.0 adc 20 - 70 v ce(sat) collector-emitter saturation voltage i c =4.0 a, i b =0.4 2adc - - 1.1 v v be base-emitter voltage i c =4.0 a, v ce =4.0 v - 1.8 - v h fe small signal current gain v ce =4.0 v, i c =1.0 a f=1.0 khz 15 - 120 - f e small signal current gain cutoff frequency v ce =4.0 v, i c =1.0 a f=1.0 khz 10 - - khz v cer(sus) collector-emitter sustaining voltage i c =0.2 a, i b =0 a r be = 100 ? 60 - - v i s/b second breakdown collector current t=1 s (non repetitive) 1.95 - - a in accordance with jedec registration data (*) pulse width 300 s, duty cycle 2.0%
2n3055 31/10/2012 comset semiconductors 3 | 3 mechanical data case to-3 revised september 2012 ????????? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assu mes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. comset se miconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does comset semiconductors assu me any liability arising out of the applic ation or use of any product and specifica lly disclaims any and all liability, including without limitation consequential or inci dental damages. comset semicon ductors? products are not author ized for use as critical components in life support devices or systems. ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min max a 11 13.10 b 0.97 1.15 c 1.5 1.65 d 8.32 8.92 f 19 20 g 10.70 11.1 n 16.50 17.20 p 25 26 r 4 4.09 u 38.50 39.30 v 30 30.30 pin 1 : base pin 2 : emitter case : collector
|
